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APTCV60TLM70T3G
Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module
Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 50A @ Tc = 80C CoolMOSTM Q1, Q4: VDSS = 600V ; ID = 29A @ Tc = 80C
Application * Solar converter * Uninterruptible Power Supplies Features * Q2, Q3 Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * * Q1, Q4 CoolMOSTM Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 ...
Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
March, 2009
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTCV60TLM70T3G - Rev 0
All ratings @ Tj = 25C unless otherwise specified
APTCV60TLM70T3G
Q1 & Q4 Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 39 29 160 20 70 250 20 1 1800 Unit V A V m W A mJ
Tc = 25C
Q1 & Q4 Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = 20 V, VDS = 0V
3
Max 25 250 70 3.9 100
Unit A m V nA
Q1 & Q4 Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 39A RG = 5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 39A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 39A, RG = 5 Min Typ 7 2.56 0.21 259 29 111 21 30 283 84 670 980 1096 1206 0.5 J J
C/W
March, 2009 2 - 11 APTCV60TLM70T3G - Rev 0
Max
Unit nF
nC
ns
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APTCV60TLM70T3G
Q2 & Q3 Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 80 50 100 20 176 100A @ 550V Unit V A V W
Q2 & Q3 Electrical Characteristics.
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 50A Tj = 150C VGE = VCE , IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA
5.0
Q2 & Q3 Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=50A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 50A Tj = 25C RG = 8.2 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Min Typ 3150 200 95 0.5 110 45 200 40 120 50 250 60 0.3 0.43 1.35 1.75 250 0.85 Max Unit pF C
ns
ns
mJ mJ
March, 2009 APTCV60TLM70T3G - Rev 0
A
C/W
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APTCV60TLM70T3G
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V IF = 30A VR = 400V Test Conditions VR=600V Tj = 25C Tj = 125C Tc = 80C Min 600 Typ Max 25 500 30 1.8 2.2 1.5 25 160 35 480 0.6 1.2 2.2 V ns nC mJ C/W Unit V A A
di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
di/dt =1000A/s
CR2, CR3, CR7 & CR8 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V IF = 30A VR = 800V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 30 2.6 3.2 1.8 300 380 360 1700 1.6 1.2 3.1 V ns nC mJ C/W Unit V A A
di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
di/dt =1000A/s
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B
March, 2009 4 - 11 APTCV60TLM70T3G - Rev 0
Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
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APTCV60TLM70T3G
Thermal and package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Min 2500 -40 -40 -40 2.5
Typ
Max 175* 125 100 4.7 110
Unit V C N.m g
*Tjmax = 150C for Q1 & Q4
SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Q2 & Q3 Typical performance curve
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz)
60
VCE=300V D=50% R G=8.2 T J=1 50C T c =85C
40
Hard switching
20
0 0 20 40 IC (A) 60 80
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March, 2009
80
17 12
28
APTCV60TLM70T3G
Output Characteristics (VGE=15V) Output Characteristics 100
TJ = 150C VGE=19V
100
TJ=25C
80
IC (A)
TJ=125C
80 IC (A)
TJ=150C VGE=13V
60 40 20 0 0 0.5 1
TJ=25C
60
VGE=15V
40 20 0
VGE=9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
100 80 60 40 20 0 5
Transfert Characteristics 3.5
TJ=25C
Energy losses vs Collector Current 3 2.5 E (mJ)
VCE = 300V VGE = 15V RG = 8.2 TJ = 150C
Eoff
IC (A)
2 1.5 1
TJ=150C TJ=25C
0.5 0 11 12 0 20 40 IC (A) 60 80
Eon
6
7
8
9
10
100
VGE (V) Switching Energy Losses vs Gate Resistance 3 2.5 2 E (mJ) 1.5 1
Eon Eoff
Reverse Bias Safe Operating Area 125 100 IC (A) 75 50 25 0
VGE=15V TJ=150C RG=8.2
0.5 0 5 15
VCE = 300V VGE =15V IC = 50A TJ = 150C
25 35 45 55 Gate Resistance (ohms)
65
0
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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APTCV60TLM70T3G
Q1 & Q4 Typical performance curve
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A)
6.5V 6V 5.5V
Transfert Characteristics 140 ID, Drain Current (A) 120 100 80 60 40 20 0 0
TJ=125C TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
160 120 80
VGS=15&10V
5V
40 0 0 5 10 15
4.5V 4V
20
25
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.1 1.05 1 0.95 0.9 0 10 20 30 40 50 60 ID, Drain Current (A) ID, DC Drain Current (A)
Normalized to VGS=10V @ 19.5A VGS=10V
1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 40 35 30 25 20 15 10 5 0 25 50 75 100 125 TC, Case Temperature (C) 150
March, 2009 7 - 11 APTCV60TLM70T3G - Rev 0
VGS=20V
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APTCV60TLM70T3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1000 ID, Drain Current (A) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 39A
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C 1 10 100
1 ms 10 ms
1
1000
VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300
March, 2009
10000
ID=39A TJ=25C
VDS=120V VDS=300V VDS=480V
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTCV60TLM70T3G
350 300
td(on) and td(off) (ns) Delay Times vs Current 120
td(off)
Rise and Fall times vs Current
VDS=400V RG=5 TJ=125C L=100H
100 tr and tf (ns) 80 60 40 20 0
250 200 150 100 50 0 0 10 20 30 40 50 60 70
ID, Drain Current (A) Switching Energy vs Current 2.5
VDS=400V RG=5 TJ=125C L=100H td(on) VDS=400V RG=5 TJ=125C L=100H
tf
tr
0
10
20
30
40
50
60
70
ID, Drain Current (A) Switching Energy vs Gate Resistance 5 Switching Energy (mJ) 4 3 2 1 0
VDS=400V ID=39A TJ=125C L=100H
Switching Energy (mJ)
2 1.5
Eoff Eon
Eoff
1 0.5 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70
Eon
Eoff
0
5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms)
Operating Frequency vs Drain Current 120 Frequency (kHz) 100 80 60 40 20 0 5 10 15 20 25 30 ID, Drain Current (A) 35
VDS=400V D=50% RG=5 TJ=125C TC=75C hard switching
IDR, Reverse Drain Current (A)
140
Source to Drain Diode Forward Voltage 1000
100
TJ=150C
10
TJ=25C
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
March, 2009
VSD, Source to Drain Voltage (V)
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APTCV60TLM70T3G - Rev 0
APTCV60TLM70T3G
CR5 & CR6 Typical performance curve
Forward Characteristic of diode 80
60 IF (A)
TJ=125C
40
TJ=25C
20
0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4
Energy losses vs Collector Current 1 0.75 E (mJ) 0.5 0.25 0 0 20 40 IC (A) 60 80
VCE = 400V VGE = 15V RG = 2.5 TJ = 125C
Switching Energy Losses vs Gate Resistance 1
0.75 E (mJ)
0.5
VCE = 400V VGE =15V IC = 30A TJ = 125C
0.25
0 0 2 4 6 8 Gate Resistance (ohms) 10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2
0.9 0.7 0.5 0.3 0.1 0.05
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
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APTCV60TLM70T3G - Rev 0
March, 2009
Rectangular Pulse Duration (Seconds)
APTCV60TLM70T3G
CR2, CR3, CR7 & CR8 Typical performance curve
Forward Current vs Forward Voltage 80 IF, Forward Current (A)
TJ=125C
60
40
20
TJ=25C
0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Energy losses vs Collector Current 2.5 2 E (mJ) E (mJ) 1.5 1 0.5 0 0 20 40 IC (A) 60 80
VCE = 800V VGE = 15V RG = 5 TJ = 125C
Switching Energy Losses vs Gate Resistance 1.8 1.6 1.4 1.2 1 0.8 0.6 0 10 20 30 Gate resistance (ohms)
VCE = 800V VGE =15V IC = 30A TJ = 125C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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0 0.00001
0.01
0.1
1
10

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